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SMD Efficient Fast Recovery Rectifier CEFA101-G Thru CEFA105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Super fast recovery time for high efficient Built-in strain relief Low forward voltage drop 0.067(1.70) 0.051(1.29) 0.110(2.79) 0.086(2.18) DO-214AC (SMA) 0.180(4.57) 0.160(4.06) 0.012(0.31) Mechanical Data: Case: JEDEC DO-214AC molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Approx. Weight: 0.063 gram 0.006(0.15) 0.091(2.31) 0.067(1.70) 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) 0.209(5.31) 0.185(4.70) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characterics: Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Max. Average Forward Current Max. Instantaneous Forward Voltage at 1.0A Reverse recovery time Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature Symbol CEFA101-G 50 50 35 CEFA102-G 100 100 70 CEFA103-G CEFA104-G CEFA105-G 200 200 140 400 400 280 600 600 420 Unit V V V VRRM VDC VRMS IFSM Io VF Trr IR R JL 30 A 1.0 0.92 25 1.25 35 1.3 50 A V nS uA o C/W oC o 5.0 200 25 150 -55 to +150 Tj TSTG C Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm 2 copper pad areas. "-G" suffix designates RoHS compliant Version Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFA101-G Thru CEFA105-G) Fig. 1 - Reverse Characteristics 100 10 Fig.2 - Forward Characteristics CEFA101-103 Tj=125 C Reverse Current (uA) Forward current ( A ) 10 1.0 CEFA104 Tj=75 C 1.0 0.1 CEFA105 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0.1 Tj=25 C 0.01 0 15 30 45 60 75 90 105 120 135 150 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance 35 Fig. 4 - Non Repetitive Forward Surge Current 50 Peak Surge Forward Current (A) 30 f=1MHz and applied 4VDC reverse voltage Tj=25 C 8.3mS Single Half Sine Wave JEDEC methode 40 Junction Capacitance (pF) 25 20 30 CEFA101-103 15 10 Tj=25 C 20 CEFA104-105 10 0 5 0 0.01 0.1 1.0 10 100 1 5 10 50 100 Reverse Voltage (V) Number of Cycles at 60Hz Fig 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics 2.8 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A trr | | | | | | | | Fig. 6 - Current Derating Curve 2.4 Average Forward Current (A) 2.0 1.6 1.2 0.8 0.4 00 (+) 25Vdc (approx.) () 1 NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () 0 PULSE GENERATOR (NOTE 2) (+) -0.25A Single Phase Half Wave 60Hz Notes: 1. Rise Time = 7ns max., Input Impedance = 1 megohm.22pF. 2. Rise Time = 10ns max., Source Impedance = 50 ohms. -1.0A 1cm 25 50 75 100 125 150 175 Set Time Base For 50 / 10ns / cm Ambient Temperature ( C) "-G" suffix designates RoHS compliant Version Page2 |
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